Stoichiometric and structural controlling of boron carbide thin films by using boron-carbon dual-targets

Stoichiometric and structural controlling of boron carbide thin films by using boron-carbon dual-targets

ZHANG, Song; TU, Rong; LU, Wenzhong; WANG, Chuanbin; SHEN, Qiang; ZHANG, Lianmeng

Abstract:

The stoichiometry of boron carbide thin films was controlled in the range of 0.1~8.9 and 3.04 ~ 5.92 via pulsed laser deposition by using SPSed- (Spark Plasma Sintered) and dual-targets, respectively. The amorphous films sized 50 nm in thickness. In the case of dual-target, the reaction rate of boron and carbon atoms increased with the increasing of target rotating speed. Uniform, layered and FGM (Functionally Graded Materials) B-C thin films can be obtained by controlling this reaction rate. Two kinds of structural evolutions have been found by investigation of bonding environments in as-deposited thin films via XPS (X-ray photoelectron spectroscopy) study. With decrease of B/C ratio, films deposited from SPSed-target show the B11C-CBB→B11C-CBC transformation. In contrast, the films deposited from dual-target present the B11C-CBB→B10C2-CBB structural change. Also, the deposition mechanism of films by this novel dual-target has been discussed.

The stoichiometry of boron carbide thin films was controlled in the range of 0.1~8.9 and 3.04 ~ 5.92 via pulsed laser deposition by using SPSed- (Spark Plasma Sintered) and dual-targets, respectively. The amorphous films sized 50 nm in thickness. In the case of dual-target, the reaction rate of boron and carbon atoms increased with the increasing of target rotating speed. Uniform, layered and FGM (Functionally Graded Materials) B-C thin films can be obtained by controlling this reaction rate. Two kinds of structural evolutions have been found by investigation of bonding environments in as-deposited thin films via XPS (X-ray photoelectron spectroscopy) study. With decrease of B/C ratio, films deposited from SPSed-target show the B11C-CBB→B11C-CBC transformation. In contrast, the films deposited from dual-target present the B11C-CBB→B10C2-CBB structural change. Also, the deposition mechanism of films by this novel dual-target has been discussed.

Palavras-chave:

DOI:

Como citar:

ZHANG, Song; TU, Rong; LU, Wenzhong; WANG, Chuanbin; SHEN, Qiang; ZHANG, Lianmeng; "Stoichiometric and structural controlling of boron carbide thin films by using boron-carbon dual-targets", p-61-61. In: Proceedings of the 13th International Symposium on Multiscale, Multifunctional and Functionally Graded Materials [=Blucher Material Science Proceedings, v.1, n.1]. São Paulo: Blucher, 2014.
ISSN 23589337, DOI